Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source∕drain stressors

We report the characterization of strain components in transistor structures with silicon-germanium ( Si 0.75 Ge 0.25 ) and silicon-carbon ( Si 0.99 C 0.01 ) stressors grown by selective epitaxy in the source and drain regions. The spacing between the source and drain stressors is 35 nm . Lattice strain analysis was performed using high-resolution transmission electron microscopy (HRTEM) and diffractograms obtained by fast Fourier transform of HRTEM images. The lateral strain component ε x x and the vertical strain component ε z z were derived from the (220) and (002) reflections in the diffractogram, respectively. SiGe source and drain stressors lead to lateral compressive strain and vertical tensile strain in the Si channel. On the other hand, the SiC source and drain stressors give rise to lateral tensile strain and vertical compressive strain in the Si channel, an effect complementary to that of SiGe source∕drain stressors. The results of this work will be useful for channel strain engineering in complementary metal-oxide-semiconductor transistors.