Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak...

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Veröffentlicht in:Applied physics letters 2005-01, Vol.86 (2)
Hauptverfasser: Choi, Woon Kyung, Kim, Doo Gun, Choi, Young Wan, Lee, Seok, Woo, Deok Ha, Kim, Sun Ho
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container_title Applied physics letters
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creator Choi, Woon Kyung
Kim, Doo Gun
Choi, Young Wan
Lee, Seok
Woo, Deok Ha
Kim, Sun Ho
description This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1850184</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1850184</sourcerecordid><originalsourceid>FETCH-LOGICAL-c159t-30224c4dc0ce9d9506183453e473c370126fa3ca0277fd8959470f9e4abe1bb43</originalsourceid><addsrcrecordid>eNotkL1OwzAUhS0EEqUw8AZeGVx8YztOxqqCUqkSDDBHrnPTGqVJsJ1GnVh5AV6QJ6FVO50fHX3DIeQe-AR4Kh5hApnikMkLMgKuNRMA2SUZcc4FS3MF1-QmhM9DVIkQI_K9NME1a2o3xhsb0bsQnQ20reiimZtp-Pv5PZk3uu3r6Loa2Vdvmthv2YB1TQezw3XvSmRx3yEt8bCIWNK2O4BMTeNmf4S2ng4ubugO_akfXFO2wy25qkwd8O6sY_Lx_PQ-e2HL1_liNl0yCyqPTPAkkVaWllvMy1zxFDIhlUCphRWaQ5JWRljDE62rMstVLjWvcpRmhbBaSTEmDyeu9W0IHqui825r_L4AXhyfK6A4Pyf-AU_cY8o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</creator><creatorcontrib>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</creatorcontrib><description>This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1850184</identifier><language>eng</language><ispartof>Applied physics letters, 2005-01, Vol.86 (2)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-30224c4dc0ce9d9506183453e473c370126fa3ca0277fd8959470f9e4abe1bb43</citedby><cites>FETCH-LOGICAL-c159t-30224c4dc0ce9d9506183453e473c370126fa3ca0277fd8959470f9e4abe1bb43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Choi, Woon Kyung</creatorcontrib><creatorcontrib>Kim, Doo Gun</creatorcontrib><creatorcontrib>Choi, Young Wan</creatorcontrib><creatorcontrib>Lee, Seok</creatorcontrib><creatorcontrib>Woo, Deok Ha</creatorcontrib><creatorcontrib>Kim, Sun Ho</creatorcontrib><title>Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><title>Applied physics letters</title><description>This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAUhS0EEqUw8AZeGVx8YztOxqqCUqkSDDBHrnPTGqVJsJ1GnVh5AV6QJ6FVO50fHX3DIeQe-AR4Kh5hApnikMkLMgKuNRMA2SUZcc4FS3MF1-QmhM9DVIkQI_K9NME1a2o3xhsb0bsQnQ20reiimZtp-Pv5PZk3uu3r6Loa2Vdvmthv2YB1TQezw3XvSmRx3yEt8bCIWNK2O4BMTeNmf4S2ng4ubugO_akfXFO2wy25qkwd8O6sY_Lx_PQ-e2HL1_liNl0yCyqPTPAkkVaWllvMy1zxFDIhlUCphRWaQ5JWRljDE62rMstVLjWvcpRmhbBaSTEmDyeu9W0IHqui825r_L4AXhyfK6A4Pyf-AU_cY8o</recordid><startdate>20050110</startdate><enddate>20050110</enddate><creator>Choi, Woon Kyung</creator><creator>Kim, Doo Gun</creator><creator>Choi, Young Wan</creator><creator>Lee, Seok</creator><creator>Woo, Deok Ha</creator><creator>Kim, Sun Ho</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050110</creationdate><title>Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><author>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c159t-30224c4dc0ce9d9506183453e473c370126fa3ca0277fd8959470f9e4abe1bb43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Woon Kyung</creatorcontrib><creatorcontrib>Kim, Doo Gun</creatorcontrib><creatorcontrib>Choi, Young Wan</creatorcontrib><creatorcontrib>Lee, Seok</creatorcontrib><creatorcontrib>Woo, Deok Ha</creatorcontrib><creatorcontrib>Kim, Sun Ho</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Woon Kyung</au><au>Kim, Doo Gun</au><au>Choi, Young Wan</au><au>Lee, Seok</au><au>Woo, Deok Ha</au><au>Kim, Sun Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</atitle><jtitle>Applied physics letters</jtitle><date>2005-01-10</date><risdate>2005</risdate><volume>86</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</abstract><doi>10.1063/1.1850184</doi></addata></record>
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title Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T21%3A08%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lasing%20characteristics%20of%20InGaAs%E2%88%95InGaAsP%20multiple-quantum-well%20waveguide-type%20depleted%20optical%20thyristor%20with%20vertical%20window&rft.jtitle=Applied%20physics%20letters&rft.au=Choi,%20Woon%20Kyung&rft.date=2005-01-10&rft.volume=86&rft.issue=2&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1850184&rft_dat=%3Ccrossref%3E10_1063_1_1850184%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true