Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak...
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Veröffentlicht in: | Applied physics letters 2005-01, Vol.86 (2) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1850184 |