Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak...

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Veröffentlicht in:Applied physics letters 2005-01, Vol.86 (2)
Hauptverfasser: Choi, Woon Kyung, Kim, Doo Gun, Choi, Young Wan, Lee, Seok, Woo, Deok Ha, Kim, Sun Ho
Format: Artikel
Sprache:eng
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Zusammenfassung:This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1850184