Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor

The superfast (picosecond range) high-current switching observed recently in a GaAs junction bipolar transistor is explained by practically homogeneous carrier generation in the volume of the switching channels by a moving train of avalanching Gunn domains of large amplitude. The very fast ( ∼ 200 p...

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Veröffentlicht in:	Journal of applied physics 2005-01, Vol.97 (2), p.024502-024502-9
Hauptverfasser:	Vainshtein, S. N., Yuferev, V. S., Kostamovaara, J. T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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