Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68∕Si(001) heterostructure grown by low-temperature (300°C) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocati...

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Veröffentlicht in:Applied physics letters 2004-12, Vol.85 (25), p.6140-6142
Hauptverfasser: Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.
Format: Artikel
Sprache:eng
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Zusammenfassung:The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68∕Si(001) heterostructure grown by low-temperature (300°C) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocations during expansion are visualized.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1839271