IV - VI device arrays: Microfabrication and specific contact resistivity
Techniques for the preparation of highly integrated arrays of IV - VI semiconductors are presented. PbSnTeSe films were grown by molecular-beam epitaxy and array structures are fabricated by photolithography, electrical contact formation, and etching. The rationale for forming electrical contacts wi...
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Veröffentlicht in: | Applied physics letters 2004-11, Vol.85 (22), p.5415-5417 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Techniques for the preparation of highly integrated arrays of
IV
-
VI
semiconductors are presented.
PbSnTeSe
films were grown by molecular-beam epitaxy and array structures are fabricated by photolithography, electrical contact formation, and etching. The rationale for forming electrical contacts with low specific contact resistivity is provided. Characterization of the specific contact resistivity was performed using a transmission line technique. Using a procedure discussed in this letter, specific contact resistivity measurements as low as
7
×
10
−
8
Ω
cm
2
have been obtained and demonstrate the feasibility of a class of highly integrated
IV
-
VI
device technology. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1825056 |