Publisher's Note: "Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution" [ Appl. Phys. Lett. 85 , 660 ( 2004 ) ]

Publisher's Note: "Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution" [ Appl. Phys. Lett. 85 , 660 ( 2004 ) ]

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Veröffentlicht in:Applied physics letters 2004-11, Vol.85 (20), p.4807-4807
Hauptverfasser: Kim, Tae Hun, Sim, Jae Sung, Lee, Jong Duk, Shin, Hyung Cheol, Park, Byung-Gook
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container_issue 20
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container_title Applied physics letters
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creator Kim, Tae Hun
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Shin, Hyung Cheol
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description
doi_str_mv 10.1063/1.1822924
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title Publisher's Note: "Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution" [ Appl. Phys. Lett. 85 , 660 ( 2004 ) ]
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