Ultrafast electron capture into p -modulation-doped quantum dots
Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to r...
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Veröffentlicht in: | Applied physics letters 2004-11, Vol.85 (20), p.4570-4572 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to rapid electron-hole scattering involving the built-in carrier population. Results for
p
-doped quantum dots reveal a threefold decrease in the room-temperature electron relaxation time relative to corresponding undoped quantum dots. Our findings are promising for the development of high-speed, GaAs-based quantum dot lasers with modulation speeds in excess of
30
GHz
. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1815371 |