1 ∕ f noise in single-walled carbon nanotube devices

We report the scaling behavior of 1 ∕ f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1 ∕ f noise and find that for devices of a given resistance the noise scales inversely with device size. We have e...

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Veröffentlicht in:Applied physics letters 2004-11, Vol.85 (18), p.4172-4174
Hauptverfasser: Snow, E. S., Novak, J. P., Lay, M. D., Perkins, F. K.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report the scaling behavior of 1 ∕ f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1 ∕ f noise and find that for devices of a given resistance the noise scales inversely with device size. We have established an empirical formula that describes this behavior over a wide range of device parameters that can be used to assess the noise characteristics of carbon nanotube-based electronic devices and sensors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1812838