Blue emission from CaS:Cu,F thin-film electroluminescent device fabricated on Si substrate

Thin-film electroluminescent (TFEL) devices were fabricated on Si substrates by using Si O 2 and Y 2 O 3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850 ° C for 10 min in Ar showed a purple EL with a peak at 425 nm . Commission Internationale de l'Eclairage (CIE) color coordinates of x = 0.217 , y = 0.223 under driving at 220 V 0 − p of 1 kHz trapezoidal wave. The purple EL from CaS:Cu TFEL device could be achieved, although luminance was weak, and a little longer wavelength component was included.