Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions
We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well...
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| Veröffentlicht in: | Journal of applied physics 2004-11, Vol.96 (10), p.5663-5667 |
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| container_issue | 10 |
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| container_title | Journal of applied physics |
| container_volume | 96 |
| creator | Guzenko, V. A. Thillosen, N. Dahmen, A. Calarco, R. Schäpers, Th Houben, L. Luysberg, M. Schineller, B. Heuken, M. Kaluza, A. |
| description | We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy. |
| doi_str_mv | 10.1063/1.1805718 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1805718</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1805718</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-2a3df300f42cd0d394fdb985f2545b8c124ffc5a3e61c655f7b0a3d27856daa03</originalsourceid><addsrcrecordid>eNotkD1PwzAUAC0EEqUw8A_eitSU9-w4cUZUQUFqYYGukesPapQmke0K9d8DotNNd8Mxdks4J6zEPc1JoaxJnbEJoWqKWko8ZxNEToVq6uaSXaX0hUikRDNhm7X-7F0OBnRvIeV4MPkQdQdjHEYXc3AJBg9L_Qp5F3ro9NHFBGE_drrPzsJ3yDtY9zNYxBkMETYQhj5dswuvu-RuTpyyj6fH98VzsXpbviweVoXhFc8F18J6gehLbixa0ZTebhslPZel3CpDvPTeSC1cRaaS0tdb_FV4rWRltUYxZXf_XROHlKLz7RjDXsdjS9j-DWmpPQ0RP4jCUlU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Guzenko, V. A. ; Thillosen, N. ; Dahmen, A. ; Calarco, R. ; Schäpers, Th ; Houben, L. ; Luysberg, M. ; Schineller, B. ; Heuken, M. ; Kaluza, A.</creator><creatorcontrib>Guzenko, V. A. ; Thillosen, N. ; Dahmen, A. ; Calarco, R. ; Schäpers, Th ; Houben, L. ; Luysberg, M. ; Schineller, B. ; Heuken, M. ; Kaluza, A.</creatorcontrib><description>We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1805718</identifier><language>eng</language><ispartof>Journal of applied physics, 2004-11, Vol.96 (10), p.5663-5667</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-2a3df300f42cd0d394fdb985f2545b8c124ffc5a3e61c655f7b0a3d27856daa03</citedby><cites>FETCH-LOGICAL-c262t-2a3df300f42cd0d394fdb985f2545b8c124ffc5a3e61c655f7b0a3d27856daa03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Guzenko, V. A.</creatorcontrib><creatorcontrib>Thillosen, N.</creatorcontrib><creatorcontrib>Dahmen, A.</creatorcontrib><creatorcontrib>Calarco, R.</creatorcontrib><creatorcontrib>Schäpers, Th</creatorcontrib><creatorcontrib>Houben, L.</creatorcontrib><creatorcontrib>Luysberg, M.</creatorcontrib><creatorcontrib>Schineller, B.</creatorcontrib><creatorcontrib>Heuken, M.</creatorcontrib><creatorcontrib>Kaluza, A.</creatorcontrib><title>Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions</title><title>Journal of applied physics</title><description>We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAUAC0EEqUw8A_eitSU9-w4cUZUQUFqYYGukesPapQmke0K9d8DotNNd8Mxdks4J6zEPc1JoaxJnbEJoWqKWko8ZxNEToVq6uaSXaX0hUikRDNhm7X-7F0OBnRvIeV4MPkQdQdjHEYXc3AJBg9L_Qp5F3ro9NHFBGE_drrPzsJ3yDtY9zNYxBkMETYQhj5dswuvu-RuTpyyj6fH98VzsXpbviweVoXhFc8F18J6gehLbixa0ZTebhslPZel3CpDvPTeSC1cRaaS0tdb_FV4rWRltUYxZXf_XROHlKLz7RjDXsdjS9j-DWmpPQ0RP4jCUlU</recordid><startdate>20041115</startdate><enddate>20041115</enddate><creator>Guzenko, V. A.</creator><creator>Thillosen, N.</creator><creator>Dahmen, A.</creator><creator>Calarco, R.</creator><creator>Schäpers, Th</creator><creator>Houben, L.</creator><creator>Luysberg, M.</creator><creator>Schineller, B.</creator><creator>Heuken, M.</creator><creator>Kaluza, A.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20041115</creationdate><title>Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions</title><author>Guzenko, V. A. ; Thillosen, N. ; Dahmen, A. ; Calarco, R. ; Schäpers, Th ; Houben, L. ; Luysberg, M. ; Schineller, B. ; Heuken, M. ; Kaluza, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-2a3df300f42cd0d394fdb985f2545b8c124ffc5a3e61c655f7b0a3d27856daa03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guzenko, V. A.</creatorcontrib><creatorcontrib>Thillosen, N.</creatorcontrib><creatorcontrib>Dahmen, A.</creatorcontrib><creatorcontrib>Calarco, R.</creatorcontrib><creatorcontrib>Schäpers, Th</creatorcontrib><creatorcontrib>Houben, L.</creatorcontrib><creatorcontrib>Luysberg, M.</creatorcontrib><creatorcontrib>Schineller, B.</creatorcontrib><creatorcontrib>Heuken, M.</creatorcontrib><creatorcontrib>Kaluza, A.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guzenko, V. A.</au><au>Thillosen, N.</au><au>Dahmen, A.</au><au>Calarco, R.</au><au>Schäpers, Th</au><au>Houben, L.</au><au>Luysberg, M.</au><au>Schineller, B.</au><au>Heuken, M.</au><au>Kaluza, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions</atitle><jtitle>Journal of applied physics</jtitle><date>2004-11-15</date><risdate>2004</risdate><volume>96</volume><issue>10</issue><spage>5663</spage><epage>5667</epage><pages>5663-5667</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.</abstract><doi>10.1063/1.1805718</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2004-11, Vol.96 (10), p.5663-5667 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T10%3A39%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Magnetic%20and%20structural%20properties%20of%20GaN%20thin%20layers%20implanted%20with%20Mn,%20Cr,%20or%20V%20ions&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Guzenko,%20V.%20A.&rft.date=2004-11-15&rft.volume=96&rft.issue=10&rft.spage=5663&rft.epage=5667&rft.pages=5663-5667&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1805718&rft_dat=%3Ccrossref%3E10_1063_1_1805718%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |