Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well...

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Veröffentlicht in:Journal of applied physics 2004-11, Vol.96 (10), p.5663-5667
Hauptverfasser: Guzenko, V. A., Thillosen, N., Dahmen, A., Calarco, R., Schäpers, Th, Houben, L., Luysberg, M., Schineller, B., Heuken, M., Kaluza, A.
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Sprache:eng
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Zusammenfassung:We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1805718