Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects

The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional transmission electron microscopy and time-resolved reflectivity. We find long-wavelength roughness...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2004-11, Vol.96 (10), p.5462-5468
Hauptverfasser: Barvosa-Carter, William, Aziz, Michael J., Phan, A.-V., Kaplan, T., Gray, L. J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional transmission electron microscopy and time-resolved reflectivity. We find long-wavelength roughness in the absence of an applied stress that arises solely from the dopant-gradient. With the addition of a compressive stress, the interface roughens further with an enhanced magnitude and a dramatically reduced wavelength. We discuss the experimental results in the context of a simulation that includes our current understanding of stress, dopant-gradient, and interface anisotropy effects. We find a rich interplay between these effects in determining growth morphology evolution, and demonstrate the successes and current limitations of the model.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1790580