Exchange biasing of the ferromagnetic semiconductor Ga1−xMnxAs
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1−xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (TB=48±2K) and the Curie temperature of the ferromagnet (TC=55.1±0.2K) are com...
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Veröffentlicht in: | Applied physics letters 2004-08, Vol.85 (9), p.1556-1558 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1−xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (TB=48±2K) and the Curie temperature of the ferromagnet (TC=55.1±0.2K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1787945 |