Exchange biasing of the ferromagnetic semiconductor Ga1−xMnxAs

We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1−xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (TB=48±2K) and the Curie temperature of the ferromagnet (TC=55.1±0.2K) are com...

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Veröffentlicht in:Applied physics letters 2004-08, Vol.85 (9), p.1556-1558
Hauptverfasser: Eid, K. F., Stone, M. B., Ku, K. C., Maksimov, O., Schiffer, P., Samarth, N., Shih, T. C., Palmstrøm, C. J.
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Sprache:eng
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Zusammenfassung:We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1−xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (TB=48±2K) and the Curie temperature of the ferromagnet (TC=55.1±0.2K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1787945