Determination of the band gap depth profile of the penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 chalcopyrite from its composition gradient

Determination of the band gap depth profile of the penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 chalcopyrite from its composition gradient

A simple model is introduced which determines the optical band-gap energy Eg for penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 (CIGSSe) alloys from its Ga∕(Ga+In) ratio as well as from its S∕(S+Se) ratio. In order to verify the model the depth dependent composition of a CIGSSe sample was revealed by elastic...

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Veröffentlicht in:Journal of applied physics 2004-10, Vol.96 (7), p.3857-3860
Hauptverfasser: Bär, M., Bohne, W., Röhrich, J., Strub, E., Lindner, S., Lux-Steiner, M. C., Fischer, Ch.-H., Niesen, T. P., Karg, F.
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container_end_page 3860
container_issue 7
container_start_page 3857
container_title Journal of applied physics
container_volume 96
creator Bär, M.
Bohne, W.
Röhrich, J.
Strub, E.
Lindner, S.
Lux-Steiner, M. C.
Fischer, Ch.-H.
Niesen, T. P.
Karg, F.
description A simple model is introduced which determines the optical band-gap energy Eg for penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 (CIGSSe) alloys from its Ga∕(Ga+In) ratio as well as from its S∕(S+Se) ratio. In order to verify the model the depth dependent composition of a CIGSSe sample was revealed by elastic recoil detection analysis. Applying the model, the concentration profiles were transferred in an Eg profile. Finally, these values were compared with optical band-gap energies, which were obtained directly by independent characterization methods.
doi_str_mv 10.1063/1.1786340
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title Determination of the band gap depth profile of the penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 chalcopyrite from its composition gradient
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