Determination of the band gap depth profile of the penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 chalcopyrite from its composition gradient
A simple model is introduced which determines the optical band-gap energy Eg for penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 (CIGSSe) alloys from its Ga∕(Ga+In) ratio as well as from its S∕(S+Se) ratio. In order to verify the model the depth dependent composition of a CIGSSe sample was revealed by elastic...
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Veröffentlicht in: | Journal of applied physics 2004-10, Vol.96 (7), p.3857-3860 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A simple model is introduced which determines the optical band-gap energy Eg for penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 (CIGSSe) alloys from its Ga∕(Ga+In) ratio as well as from its S∕(S+Se) ratio. In order to verify the model the depth dependent composition of a CIGSSe sample was revealed by elastic recoil detection analysis. Applying the model, the concentration profiles were transferred in an Eg profile. Finally, these values were compared with optical band-gap energies, which were obtained directly by independent characterization methods. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1786340 |