Electrical characterization of Cd ∕ CdTe Schottky barrier diodes
We have deposited Cd metal contacts on molecular-beam epitaxy CdTe ( 112 ) B on Si ( 112 ) and have made electronic transport measurements to deduce the properties of the Schottky barrier diode thus formed. We find a room-temperature barrier height ϕ B = 0.92 eV and an ideality factor n ≈ 2 . We sug...
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| Veröffentlicht in: | Applied physics letters 2004-09, Vol.85 (10), p.1730-1732 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We have deposited
Cd
metal contacts on molecular-beam epitaxy
CdTe
(
112
)
B
on
Si
(
112
)
and have made electronic transport measurements to deduce the properties of the Schottky barrier diode thus formed. We find a room-temperature barrier height
ϕ
B
=
0.92
eV
and an ideality factor
n
≈
2
. We suggest that the high value of
n
is due to generation-recombination currents associated with dislocations in the
CdTe
epilayer. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1784873 |