Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer
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| Veröffentlicht in: | Applied physics letters 2004-08, Vol.85 (9), p.1502-1504 |
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| Sprache: | eng |
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| container_end_page | 1504 |
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| container_issue | 9 |
| container_start_page | 1502 |
| container_title | Applied physics letters |
| container_volume | 85 |
| creator | Lee, Kang Jea Shin, Eun Ho Lim, Kee Young |
| description | |
| doi_str_mv | 10.1063/1.1784046 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-08, Vol.85 (9), p.1502-1504 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1784046 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer |
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