Coulomb blockade and negative differential conductance in metallic double-dot devices

We systematically analyze the stability diagrams and simulate the finite temperature current-voltage characteristics for metallic double-dot devices with cross couplings between dots and gates. The Coulomb blockade is described with respect to each device parameter. The negative differential conduct...

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Veröffentlicht in:Journal of applied physics 2004-09, Vol.96 (6), p.3302-3306
Hauptverfasser: Nguyen, V. Hung, Nguyen, V. Lien, Nguyen, H. Nam
Format: Artikel
Sprache:eng
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Zusammenfassung:We systematically analyze the stability diagrams and simulate the finite temperature current-voltage characteristics for metallic double-dot devices with cross couplings between dots and gates. The Coulomb blockade is described with respect to each device parameter. The negative differential conductance observed is essentially suppressed by increasing the temperature and/or introducing the offset charge and is very sensitive to the device parameters.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1782954