Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide
Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at E V + 34 meV is found to be the important acce...
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| Veröffentlicht in: | Applied physics letters 2004-07, Vol.85 (3), p.384-386 |
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| creator | Ling, C. C. Lui, M. K. Ma, S. K. Chen, X. D. Fung, S. Beling, C. D. |
| description | Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at
E
V
+
34
meV
is found to be the important acceptor responsible for the
p
-type conduction of the samples. Two different kinds of
V
Ga
-related defects (lifetimes of
280
ps
and
315
ps
, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the
E
V
+
34
meV
level could not be related to the two
V
Ga
-related defects. |
| doi_str_mv | 10.1063/1.1773934 |
| format | Article |
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E
V
+
34
meV
is found to be the important acceptor responsible for the
p
-type conduction of the samples. Two different kinds of
V
Ga
-related defects (lifetimes of
280
ps
and
315
ps
, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the
E
V
+
34
meV
level could not be related to the two
V
Ga
-related defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1773934</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2004-07, Vol.85 (3), p.384-386</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-bf52e7c9274ee985bb01d5b840be6f475fcf03a1cb03b411d38ad3a0b4751fb83</citedby><cites>FETCH-LOGICAL-c383t-bf52e7c9274ee985bb01d5b840be6f475fcf03a1cb03b411d38ad3a0b4751fb83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ling, C. C.</creatorcontrib><creatorcontrib>Lui, M. K.</creatorcontrib><creatorcontrib>Ma, S. K.</creatorcontrib><creatorcontrib>Chen, X. D.</creatorcontrib><creatorcontrib>Fung, S.</creatorcontrib><creatorcontrib>Beling, C. D.</creatorcontrib><title>Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide</title><title>Applied physics letters</title><description>Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at
E
V
+
34
meV
is found to be the important acceptor responsible for the
p
-type conduction of the samples. Two different kinds of
V
Ga
-related defects (lifetimes of
280
ps
and
315
ps
, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the
E
V
+
34
meV
level could not be related to the two
V
Ga
-related defects.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoWKsL_0G2LqbmNjOd6UaQ4guKbnQd8rhpo9NkTDKIgv_dKdOtq8vhfBy4HyGXwGbAFvwaZlDXfMnLIzIBVtcFB2iOyYQxxovFsoJTcpbS-xCrOecT8vsscx-RBkvzFqnUGrscIo2YuuCTUy1SO-SOFvm7Q6qDN73OLnjqPG3dZ-8MRa9ll_pWZjR09RP0Nso2fbhiE8OXp703oRuajWxb1--o9NntgncGz8mJHUi8ONwpebu_e109FuuXh6fV7brQvOG5ULaaY62X87pEXDaVUgxMpZqSKVzYsq6stoxL0IpxVQIY3kjDJVNDBVY1fEquxl0dQ0oRreii28n4LYCJvTcB4uBtYG9GNmmX5f7T_-FRnghWDPLEKI__AZp-eKA</recordid><startdate>20040719</startdate><enddate>20040719</enddate><creator>Ling, C. C.</creator><creator>Lui, M. K.</creator><creator>Ma, S. K.</creator><creator>Chen, X. D.</creator><creator>Fung, S.</creator><creator>Beling, C. D.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040719</creationdate><title>Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide</title><author>Ling, C. C. ; Lui, M. K. ; Ma, S. K. ; Chen, X. D. ; Fung, S. ; Beling, C. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-bf52e7c9274ee985bb01d5b840be6f475fcf03a1cb03b411d38ad3a0b4751fb83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ling, C. C.</creatorcontrib><creatorcontrib>Lui, M. K.</creatorcontrib><creatorcontrib>Ma, S. K.</creatorcontrib><creatorcontrib>Chen, X. D.</creatorcontrib><creatorcontrib>Fung, S.</creatorcontrib><creatorcontrib>Beling, C. D.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ling, C. C.</au><au>Lui, M. K.</au><au>Ma, S. K.</au><au>Chen, X. D.</au><au>Fung, S.</au><au>Beling, C. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide</atitle><jtitle>Applied physics letters</jtitle><date>2004-07-19</date><risdate>2004</risdate><volume>85</volume><issue>3</issue><spage>384</spage><epage>386</epage><pages>384-386</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at
E
V
+
34
meV
is found to be the important acceptor responsible for the
p
-type conduction of the samples. Two different kinds of
V
Ga
-related defects (lifetimes of
280
ps
and
315
ps
, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the
E
V
+
34
meV
level could not be related to the two
V
Ga
-related defects.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1773934</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-07, Vol.85 (3), p.384-386 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1773934 |
| source | American Institute of Physics (AIP) Journals; AIP Digital Archive |
| title | Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide |
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