Nature of the acceptor responsible for p -type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at E V + 34 meV is found to be the important acceptor responsible for the p -type conduction of the samples. Two different kinds of V Ga -related defects (lifetimes of 280 ps and 315 ps , respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the E V + 34 meV level could not be related to the two V Ga -related defects.