Performance summary on a high power dense plasma focus x-ray lithography point source producing 70 nm line features in AlGaAs microcircuits
A high average power dense plasma focus (DPF), x-ray point source has been used to produce ∼70 nm line features in AlGaAs -based monolithic millimeter-wave integrated circuits (MMICs). The DPF source has produced up to 12 J per pulse of x-ray energy into 4π steradians at ∼1 keV effective waveleng...
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Veröffentlicht in: | Review of scientific instruments 2004-08, Vol.75 (8), p.2551-2559 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A high average power dense plasma focus (DPF), x-ray point source has been used to produce
∼70
nm
line features in
AlGaAs
-based monolithic millimeter-wave integrated circuits (MMICs). The DPF source has produced up to
12
J
per pulse of x-ray energy into
4π
steradians at
∼1
keV
effective wavelength in
∼2
Torr
neon at pulse repetition rates up to
60
Hz
, with an effective x-ray yield efficiency of
∼0.8%
. Plasma temperature and electron concentration are estimated from the x-ray spectrum to be
∼170
eV
and
∼5·10
19
cm
−3
, respectively. The x-ray point source utilizes solid-state pulse power technology to extend the operating lifetime of electrodes and insulators in the DPF discharge. By eliminating current reversals in the DPF head, an anode electrode has demonstrated a lifetime of more than 5 million shots. The x-ray point source has also been operated continuously for
8
h
run times at
27
Hz
average pulse recurrent frequency. Measurements of shock waves produced by the plasma discharge indicate that overpressure pulses must be attenuated before a collimator can be integrated with the DPF point source. |
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ISSN: | 0034-6748 1089-7623 |
DOI: | 10.1063/1.1771502 |