Impurity band characteristics near the band edge of Al-doped ZnO

The characteristics of impurity bands near the band edge of Al-doped and undoped ZnO ceramics were investigated by photoluminescence, photoluminescence excitation, and x-ray diffraction. We found that Al(0.6%)-doped ZnO had two impurity bands whose binding energies were roughly 13 and 99meV below th...

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Veröffentlicht in:Journal of applied physics 2004-08, Vol.96 (3), p.1507-1510
Hauptverfasser: Hur, Tae-Bong, Hwang, Yoon-Hwae, Kim, Hyung-Kook
Format: Artikel
Sprache:eng
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Zusammenfassung:The characteristics of impurity bands near the band edge of Al-doped and undoped ZnO ceramics were investigated by photoluminescence, photoluminescence excitation, and x-ray diffraction. We found that Al(0.6%)-doped ZnO had two impurity bands whose binding energies were roughly 13 and 99meV below the effective band edge. Also, we found that Al(1.1%)-doped ZnO had an impurity band of ∼80meV binding energy below the effective band edge. As the doping concentration of ZnO increases, Al-impurity bands degenerated from two localized levels to the single localized level. The green band emission of Al(0.6%)-doped ZnO is stronger than those of the pure and Al(1.1%)-doped ZnO because of the high charge transfer rate to the effective band.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1765861