Active junction isolation for smart power integrated circuits

A structure for the isolation of power transistors from (CMOS) control circuitry used in smart power integrated circuits is proposed. This negative feedback activated junction isolation is compatible with standard CMOS technology.

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Veröffentlicht in:Applied physics letters 2004-06, Vol.84 (25), p.5148-5149
Hauptverfasser: Starke, T. K. H., Igic, P. M., Holland, P. M., Hussain, S., Jamal, W. M., Mawby, P. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A structure for the isolation of power transistors from (CMOS) control circuitry used in smart power integrated circuits is proposed. This negative feedback activated junction isolation is compatible with standard CMOS technology.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1765731