THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDS

Comparative measurements of the absorption edge of p-type GaAs and compensated GaAs over a wide temperature range demonstrate that the shape of the edge in such materials is not dependent on phonon interactions, and is attributable to the state of charge of impurities in the material.

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Veröffentlicht in:Applied physics letters 1967-08, Vol.11 (4), p.138-140
Hauptverfasser: Redfield, David, Afromowitz, Martin A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Comparative measurements of the absorption edge of p-type GaAs and compensated GaAs over a wide temperature range demonstrate that the shape of the edge in such materials is not dependent on phonon interactions, and is attributable to the state of charge of impurities in the material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1755067