Room-temperature ferromagnetism in ion-implanted Co-doped TiO2(110) rutile

Room-temperature ferromagnetism in ion-implanted Co-doped TiO2(110) rutile

Ferromagnetic Co-doped rutile TiO2 single crystals were synthesized by high-temperature ion implantation and characterized by a variety of techniques. Co is uniformly distributed to a depth of ∼300 nm with an average concentration of ∼2 at. %, except in the near-surface region, where the concentrati...

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Veröffentlicht in:Applied Physics Letters, 84(22):4466-4468 84(22):4466-4468, 2004-05, Vol.84 (22), p.4466-4468
Hauptverfasser: Shutthanandan, V., Thevuthasan, S., Heald, S. M., Droubay, T., Engelhard, M. H., Kaspar, T. C., McCready, D. E., Saraf, L., Chambers, S. A., Mun, B. S., Hamdan, N., Nachimuthu, P., Taylor, B., Sears, R. P., Sinkovic, B.
Format: Artikel
Sprache:eng
Schlagworte:
Diluted Magnetic Semiconductor, Ferremognetic materials, Vibrating Sample Magnetometry, ion implantation, Cobalt, rutile-TiO
Environmental Molecular Sciences Laboratory
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Zusammenfassung:Ferromagnetic Co-doped rutile TiO2 single crystals were synthesized by high-temperature ion implantation and characterized by a variety of techniques. Co is uniformly distributed to a depth of ∼300 nm with an average concentration of ∼2 at. %, except in the near-surface region, where the concentration is ∼3 at. %. Ferromagnetic behavior is exhibited at room temperature with an effective saturation magnetization of ∼0.6 μB/Co atom. The Co is in a formal oxidation state of +2 throughout the implanted region, and no Co(O) is detected.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1753652