High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication

We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapor deposition using metalorganic group-V regents. For both n-type Si doping and p-type Zn doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The junction showed good current–voltage characteristics and is promising for device applications.