Compensated-Surface Oxide-Passivated Silicon Junction Radiation Detectors
A semiconductor detector was constructed for operation as a guard-ring detector. Oxide passivation is used to protect the junction edges, and diffusion of Ga acceptor impurity into the Si surface is used to compensate for the donors introduced by the oxide growth. Resolution of alpha particle spectr...
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Veröffentlicht in: | Journal of Applied Physics (U.S.) 1963-05, Vol.34 (5), p.1570-1571 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A semiconductor detector was constructed for operation as a guard-ring
detector. Oxide passivation is used to protect the junction edges, and diffusion
of Ga acceptor impurity into the Si surface is used to compensate for the donors
introduced by the oxide growth. Resolution of alpha particle spectra is
typically 17 kev for 1-cm-dia detectors made in this way, and they are much less
sensitive to ambient conditions than other types of detectors. (D.L.C.) |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1729688 |