Noise Measurements in Semiconductors at Very Low Frequencies
The low-frequency noise spectra of germanium and silicon rectifiers have been determined. Two methods were employed: a numerical analysis according to the Wiener-Khintchine relationship, and a frequency translation photo playback method. No evidence of a deviation from a 1/fa(a>1) noise power law...
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Veröffentlicht in: | Journal of applied physics 1955-01, Vol.26 (6), p.716-717 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The low-frequency noise spectra of germanium and silicon rectifiers have been determined. Two methods were employed: a numerical analysis according to the Wiener-Khintchine relationship, and a frequency translation photo playback method. No evidence of a deviation from a 1/fa(a>1) noise power law was found down to frequencies as low as 6×10−5 cps. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1722076 |