Noise Measurements in Semiconductors at Very Low Frequencies

The low-frequency noise spectra of germanium and silicon rectifiers have been determined. Two methods were employed: a numerical analysis according to the Wiener-Khintchine relationship, and a frequency translation photo playback method. No evidence of a deviation from a 1/fa(a>1) noise power law...

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Veröffentlicht in:Journal of applied physics 1955-01, Vol.26 (6), p.716-717
Hauptverfasser: Firle, T. E., Winston, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The low-frequency noise spectra of germanium and silicon rectifiers have been determined. Two methods were employed: a numerical analysis according to the Wiener-Khintchine relationship, and a frequency translation photo playback method. No evidence of a deviation from a 1/fa(a>1) noise power law was found down to frequencies as low as 6×10−5 cps.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1722076