Electrical Properties of Selenium. III. Microcrystalline Selenium Metal Doped

The thermoelectric powers and dc and 200-mc resistivities of pure and metal-doped selenium have been studied as functions of temperature. The properties of materials in the two important microstructures (colony and equiaxed) were distinguished. The influences of the metals Na, Cu, Ag, Mg, Zn, Cd, Hg...

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Veröffentlicht in:Journal of applied physics 1954-01, Vol.25 (1), p.1-11
Hauptverfasser: Henkels, H. W., Maczuk, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:The thermoelectric powers and dc and 200-mc resistivities of pure and metal-doped selenium have been studied as functions of temperature. The properties of materials in the two important microstructures (colony and equiaxed) were distinguished. The influences of the metals Na, Cu, Ag, Mg, Zn, Cd, Hg, Ga, In, Tl, Pb, Sb, Bi, Te, Fe, Ni, Co, and Ce were noted. A working model of the selenium semiconductor was developed. In this model there is an acceptor level 160°C the density of acceptor levels decreases as defects are removed by structural changes in the lattice.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1721489