Pulse Height Defect and Energy Dispersion in Semiconductor Detectors

Pulse Height Defect and Energy Dispersion in Semiconductor Detectors

We have calculated the contributions of the atomic (screened Coulombic) scattering process to the pulse height defect and energy dispersion observed when heavy ions expend their energies in semiconductor detectors. Atomic scattering appears to account qualitatively for the pulse height defect observ...

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Veröffentlicht in:Review of Scientific Instruments (U.S.) 1966-02, Vol.37 (2), p.190-194
Hauptverfasser: Haines, Eldon L., Whitehead, A. Bruce
Format: Artikel
Sprache:eng
Schlagworte:
DEFECTS
DETECTION
ENERGY
GERMANIUM
INSTRUMENTATION
IONS
LOSSES
PULSES
Radiation Detection
SCATTERING
SEMICONDUCTORS
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Zusammenfassung:We have calculated the contributions of the atomic (screened Coulombic) scattering process to the pulse height defect and energy dispersion observed when heavy ions expend their energies in semiconductor detectors. Atomic scattering appears to account qualitatively for the pulse height defect observed for most heavy ions in both silicon and germanium detectors. Atomic scattering also contributes substantially to the energy dispersion.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1720127