Bias-induced threshold voltages shifts in thin-film organic transistors

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agree...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2004-04, Vol.84 (16), p.3184-3186
Hauptverfasser:	Gomes, H. L., Stallinga, P., Dinelli, F., Murgia, M., Biscarini, F., de Leeuw, D. M., Muck, T., Geurts, J., Molenkamp, L. W., Wagner, V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!