Bias-induced threshold voltages shifts in thin-film organic transistors

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agree...

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Veröffentlicht in:Applied physics letters 2004-04, Vol.84 (16), p.3184-3186
Hauptverfasser: Gomes, H. L., Stallinga, P., Dinelli, F., Murgia, M., Biscarini, F., de Leeuw, D. M., Muck, T., Geurts, J., Molenkamp, L. W., Wagner, V.
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Sprache:eng
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Zusammenfassung:An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1713035