Bias-induced threshold voltages shifts in thin-film organic transistors
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agree...
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| Veröffentlicht in: | Applied physics letters 2004-04, Vol.84 (16), p.3184-3186 |
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| container_title | Applied physics letters |
| container_volume | 84 |
| creator | Gomes, H. L. Stallinga, P. Dinelli, F. Murgia, M. Biscarini, F. de Leeuw, D. M. Muck, T. Geurts, J. Molenkamp, L. W. Wagner, V. |
| description | An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. |
| doi_str_mv | 10.1063/1.1713035 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1713035</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1713035</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-bad21ceee58d8af09760552f678c848ad555557737c078eb0f5a64c7c7da94053</originalsourceid><addsrcrecordid>eNotkE1LAzEURYMoOFYX_oNsXaS-N5lMMkstWoWCG10PaT46kemM5EXBf2-LvZvL5cBdHMZuEZYIrbzHJWqUINUZqxC0FhLRnLMKAKRoO4WX7Iro8zBVLWXF1o_JkkiT_3bB8zLkQMM8ev4zj8XuAnEaUizE03SAaRIxjXs-552dkuMl24kSlTnTNbuIdqRwc-oF-3h-el-9iM3b-nX1sBFO1qaIrfU1uhCCMt7YCJ1uQak6tto40xjr1TFaS-1Am7CFqGzbOO20t10DSi7Y3f-vyzNRDrH_ymlv82-P0B8N9NifDMg_06JN6w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Bias-induced threshold voltages shifts in thin-film organic transistors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Gomes, H. L. ; Stallinga, P. ; Dinelli, F. ; Murgia, M. ; Biscarini, F. ; de Leeuw, D. M. ; Muck, T. ; Geurts, J. ; Molenkamp, L. W. ; Wagner, V.</creator><creatorcontrib>Gomes, H. L. ; Stallinga, P. ; Dinelli, F. ; Murgia, M. ; Biscarini, F. ; de Leeuw, D. M. ; Muck, T. ; Geurts, J. ; Molenkamp, L. W. ; Wagner, V.</creatorcontrib><description>An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1713035</identifier><language>eng</language><ispartof>Applied physics letters, 2004-04, Vol.84 (16), p.3184-3186</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-bad21ceee58d8af09760552f678c848ad555557737c078eb0f5a64c7c7da94053</citedby><cites>FETCH-LOGICAL-c328t-bad21ceee58d8af09760552f678c848ad555557737c078eb0f5a64c7c7da94053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Gomes, H. L.</creatorcontrib><creatorcontrib>Stallinga, P.</creatorcontrib><creatorcontrib>Dinelli, F.</creatorcontrib><creatorcontrib>Murgia, M.</creatorcontrib><creatorcontrib>Biscarini, F.</creatorcontrib><creatorcontrib>de Leeuw, D. M.</creatorcontrib><creatorcontrib>Muck, T.</creatorcontrib><creatorcontrib>Geurts, J.</creatorcontrib><creatorcontrib>Molenkamp, L. W.</creatorcontrib><creatorcontrib>Wagner, V.</creatorcontrib><title>Bias-induced threshold voltages shifts in thin-film organic transistors</title><title>Applied physics letters</title><description>An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEURYMoOFYX_oNsXaS-N5lMMkstWoWCG10PaT46kemM5EXBf2-LvZvL5cBdHMZuEZYIrbzHJWqUINUZqxC0FhLRnLMKAKRoO4WX7Iro8zBVLWXF1o_JkkiT_3bB8zLkQMM8ev4zj8XuAnEaUizE03SAaRIxjXs-552dkuMl24kSlTnTNbuIdqRwc-oF-3h-el-9iM3b-nX1sBFO1qaIrfU1uhCCMt7YCJ1uQak6tto40xjr1TFaS-1Am7CFqGzbOO20t10DSi7Y3f-vyzNRDrH_ymlv82-P0B8N9NifDMg_06JN6w</recordid><startdate>20040419</startdate><enddate>20040419</enddate><creator>Gomes, H. L.</creator><creator>Stallinga, P.</creator><creator>Dinelli, F.</creator><creator>Murgia, M.</creator><creator>Biscarini, F.</creator><creator>de Leeuw, D. M.</creator><creator>Muck, T.</creator><creator>Geurts, J.</creator><creator>Molenkamp, L. W.</creator><creator>Wagner, V.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040419</creationdate><title>Bias-induced threshold voltages shifts in thin-film organic transistors</title><author>Gomes, H. L. ; Stallinga, P. ; Dinelli, F. ; Murgia, M. ; Biscarini, F. ; de Leeuw, D. M. ; Muck, T. ; Geurts, J. ; Molenkamp, L. W. ; Wagner, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-bad21ceee58d8af09760552f678c848ad555557737c078eb0f5a64c7c7da94053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gomes, H. L.</creatorcontrib><creatorcontrib>Stallinga, P.</creatorcontrib><creatorcontrib>Dinelli, F.</creatorcontrib><creatorcontrib>Murgia, M.</creatorcontrib><creatorcontrib>Biscarini, F.</creatorcontrib><creatorcontrib>de Leeuw, D. M.</creatorcontrib><creatorcontrib>Muck, T.</creatorcontrib><creatorcontrib>Geurts, J.</creatorcontrib><creatorcontrib>Molenkamp, L. W.</creatorcontrib><creatorcontrib>Wagner, V.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gomes, H. L.</au><au>Stallinga, P.</au><au>Dinelli, F.</au><au>Murgia, M.</au><au>Biscarini, F.</au><au>de Leeuw, D. M.</au><au>Muck, T.</au><au>Geurts, J.</au><au>Molenkamp, L. W.</au><au>Wagner, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bias-induced threshold voltages shifts in thin-film organic transistors</atitle><jtitle>Applied physics letters</jtitle><date>2004-04-19</date><risdate>2004</risdate><volume>84</volume><issue>16</issue><spage>3184</spage><epage>3186</epage><pages>3184-3186</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.</abstract><doi>10.1063/1.1713035</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2004-04, Vol.84 (16), p.3184-3186 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Bias-induced threshold voltages shifts in thin-film organic transistors |
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