Modification of GaN(0001) growth kinetics by Mg doping

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN...

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Veröffentlicht in:	Applied physics letters 2004-04, Vol.84 (14), p.2554-2556
Hauptverfasser:	Monroy, E., Andreev, T., Holliger, P., Bellet-Amalric, E., Shibata, T., Tanaka, M., Daudin, B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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