Modification of GaN(0001) growth kinetics by Mg doping

Modification of GaN(0001) growth kinetics by Mg doping

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN...

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Veröffentlicht in:Applied physics letters 2004-04, Vol.84 (14), p.2554-2556
Hauptverfasser: Monroy, E., Andreev, T., Holliger, P., Bellet-Amalric, E., Shibata, T., Tanaka, M., Daudin, B.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1705719