Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with...
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| Veröffentlicht in: | Journal of applied physics 2004-05, Vol.95 (9), p.5252-5254 |
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| Sprache: | eng |
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| container_end_page | 5254 |
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| container_issue | 9 |
| container_start_page | 5252 |
| container_title | Journal of applied physics |
| container_volume | 95 |
| creator | Dong, Jian-Rong Teng, Jing-Hua Chua, Soo-Jin Foo, Boon-Chin Wang, Yan-Jun Zhang, Lian-Wen Yuan, Hai-Rong Yuan, Shu |
| description | Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3. |
| doi_str_mv | 10.1063/1.1695591 |
| format | Article |
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Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1695591</identifier><language>eng</language><ispartof>Journal of applied physics, 2004-05, Vol.95 (9), p.5252-5254</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-f77763a0665dee42709e8aa6cb7fb7ea85c6b9a12549ce56e6dceb1357971e823</citedby><cites>FETCH-LOGICAL-c293t-f77763a0665dee42709e8aa6cb7fb7ea85c6b9a12549ce56e6dceb1357971e823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Dong, Jian-Rong</creatorcontrib><creatorcontrib>Teng, Jing-Hua</creatorcontrib><creatorcontrib>Chua, Soo-Jin</creatorcontrib><creatorcontrib>Foo, Boon-Chin</creatorcontrib><creatorcontrib>Wang, Yan-Jun</creatorcontrib><creatorcontrib>Zhang, Lian-Wen</creatorcontrib><creatorcontrib>Yuan, Hai-Rong</creatorcontrib><creatorcontrib>Yuan, Shu</creatorcontrib><title>Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine</title><title>Journal of applied physics</title><description>Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. 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Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3.</abstract><doi>10.1063/1.1695591</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2004-05, Vol.95 (9), p.5252-5254 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1695591 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine |
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