Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with...

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Veröffentlicht in:Journal of applied physics 2004-05, Vol.95 (9), p.5252-5254
Hauptverfasser: Dong, Jian-Rong, Teng, Jing-Hua, Chua, Soo-Jin, Foo, Boon-Chin, Wang, Yan-Jun, Zhang, Lian-Wen, Yuan, Hai-Rong, Yuan, Shu
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Sprache:eng
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Zusammenfassung:Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1695591