Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices
The fabrication of free-standing GaN cantilevers on Si(111) is demonstrated, and the growth of III-nitride epilayers on silicon (111) using an AlN buffer layer is characterized. Mechanically releasing GaN structures from Si(111) required a combination of two dry inductively coupled plasma etch proce...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2004-04, Vol.84 (14), p.2566-2568 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The fabrication of free-standing GaN cantilevers on Si(111) is demonstrated, and the growth of III-nitride epilayers on silicon (111) using an AlN buffer layer is characterized. Mechanically releasing GaN structures from Si(111) required a combination of two dry inductively coupled plasma etch processes using Cl2/Ar and CF4/Ar/O2 chemistries, and a potassium hydroxide (KOH) aqueous etch. Scanning transmission electron microscopy reveals a columnar growth habit for the nitrides. Electron energy loss spectroscopy imaging of an AlGaN/GaN interface indicates columnar growth may strongly influence the potential piezoelectric properties of III-nitride cantilever microelectromechanical devices. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1695196 |