Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

The fabrication of free-standing GaN cantilevers on Si(111) is demonstrated, and the growth of III-nitride epilayers on silicon (111) using an AlN buffer layer is characterized. Mechanically releasing GaN structures from Si(111) required a combination of two dry inductively coupled plasma etch proce...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2004-04, Vol.84 (14), p.2566-2568
Hauptverfasser: Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., Chalker, P. R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The fabrication of free-standing GaN cantilevers on Si(111) is demonstrated, and the growth of III-nitride epilayers on silicon (111) using an AlN buffer layer is characterized. Mechanically releasing GaN structures from Si(111) required a combination of two dry inductively coupled plasma etch processes using Cl2/Ar and CF4/Ar/O2 chemistries, and a potassium hydroxide (KOH) aqueous etch. Scanning transmission electron microscopy reveals a columnar growth habit for the nitrides. Electron energy loss spectroscopy imaging of an AlGaN/GaN interface indicates columnar growth may strongly influence the potential piezoelectric properties of III-nitride cantilever microelectromechanical devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1695196