Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

We report on the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 6%–10% oxygen causes a minimum in film resistivity, while for thicker films, there is a monotonic increase in re...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2004-04, Vol.84 (14), p.2518-2520
Hauptverfasser: Prater, Walter L., Allen, Emily L., Lee, Wen-Y., Toney, Michael F., Daniels, Jonathan, Hedstrom, Jonathan A.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 6%–10% oxygen causes a minimum in film resistivity, while for thicker films, there is a monotonic increase in resistivity. X-ray reflectivity measurements show significantly smoother films for these oxygen flow rates. X-ray diffraction shows that the oxygen doping causes a refinement of the copper grain size and the formation of cuprous oxide. We suggest that the formation of cuprous oxide limits copper grain growth, which causes smoother interfaces, and thus reduces resistivity by increasing specular scattering of electrons at interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1691500