Electron Drift Mobility in Solid 3-Methylpentane
The excess electron mobility in solid 3-methylpentane was measured by photoinjection method. Observed values range 0.02–0.1 cm2/V·sec for 4.2–85°K. The mobility increased with temperature between 35–85°K with an activation energy of 0.01–0.02 eV and was nearly independent of temperature below 35°K....
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| Veröffentlicht in: | The Journal of chemical physics 1972-03, Vol.56 (5), p.2342-2345 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The excess electron mobility in solid 3-methylpentane was measured by photoinjection method. Observed values range 0.02–0.1 cm2/V·sec for 4.2–85°K. The mobility increased with temperature between 35–85°K with an activation energy of 0.01–0.02 eV and was nearly independent of temperature below 35°K. Phonon-assisted hopping and tunneling mechanisms are proposed for temperatures above and below 35°K, respectively. |
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| ISSN: | 0021-9606 1089-7690 |
| DOI: | 10.1063/1.1677538 |