Current-perpendicular-to-the-plane giant magnetoresistance in structures with half-metal materials laminated between CoFe layers

A current-perpendicular-to-the-plane spin-valve (CPP-SV) structure having half-metal materials laminated between CoFe layers was investigated. A CPP-SV film having a CoMnGe free layer had a resistance-change-area product ΔRA of 0.9 mΩ μm2, almost the same as that of a CPP-SV film having a simple CoF...

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Veröffentlicht in:Journal of applied physics 2004-06, Vol.95 (11), p.6774-6776
Hauptverfasser: Hoshiya, Hiroyuki, Hoshino, Katsumi
Format: Artikel
Sprache:eng
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Zusammenfassung:A current-perpendicular-to-the-plane spin-valve (CPP-SV) structure having half-metal materials laminated between CoFe layers was investigated. A CPP-SV film having a CoMnGe free layer had a resistance-change-area product ΔRA of 0.9 mΩ μm2, almost the same as that of a CPP-SV film having a simple CoFe free layer. But the ΔRA of a CPP-SV film with a CoFe/CoMnGe/CoFe sandwiched free layer was 1.6 mΩ μm2. CPP-SV films having CoFe/iron-added-magnetite/CoFe sandwiched layers were also investigated and found to have a ΔRA of ≈2 mΩ μm2. We found that a CoFe/half-metal/CoFe sandwiched layer was a stronger source of spin-dependent scattering than a CoFe layer and simple half-metal layer.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1667800