Determination of relevant parameters of the dopants Zn and Te from C-T measurements in GaP |Zn,O| p-n junctions

Using the single time constant approximation of the small ac signal capacitance of the reverse-biased GaP |Zn,O| p-n junction, a good agreement with the experimental C-T dependence in the 77–110 K temperature range was found at high frequencies. The important parameters of the dopants Zn and Te-activation energy, concentration, degree of compensation, and thermal capture coefficient-are determined applying this model.