Self-Induced Sputtering during Electron-Beam Evaporation of Ta

A pronounced nonuniformity in films of Ta deposited by electron-beam evaporation is reported. This effect is explained by the fact that positive Ta ions are generated during evaporation and, due to reflected electrons, the substrate acquires a high negative potential which accelerates the Ta ions an...

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Veröffentlicht in:J. Appl. Phys. 42: No. 13, 5856-9(Dec 1971) 5856-9(Dec 1971), 1971-01, Vol.42 (13), p.5856-5859
Hauptverfasser: Schuermeyer, Fritz L., Chase, Wayne R., King, Emerson L.
Format: Artikel
Sprache:eng
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Zusammenfassung:A pronounced nonuniformity in films of Ta deposited by electron-beam evaporation is reported. This effect is explained by the fact that positive Ta ions are generated during evaporation and, due to reflected electrons, the substrate acquires a high negative potential which accelerates the Ta ions and causes sputtering.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1660025