Self-Induced Sputtering during Electron-Beam Evaporation of Ta
A pronounced nonuniformity in films of Ta deposited by electron-beam evaporation is reported. This effect is explained by the fact that positive Ta ions are generated during evaporation and, due to reflected electrons, the substrate acquires a high negative potential which accelerates the Ta ions an...
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Veröffentlicht in: | J. Appl. Phys. 42: No. 13, 5856-9(Dec 1971) 5856-9(Dec 1971), 1971-01, Vol.42 (13), p.5856-5859 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A pronounced nonuniformity in films of Ta deposited by electron-beam evaporation is reported. This effect is explained by the fact that positive Ta ions are generated during evaporation and, due to reflected electrons, the substrate acquires a high negative potential which accelerates the Ta ions and causes sputtering. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1660025 |