Interpretation of channeling effect measurements of disorder in ion-implanted silicon

A new method of applying channeling to determine the number of displaced atoms in an ion-implanted silicon sample is described. The technique utilizes measurements of the transmission energy spectra of channeled protons scattered 10° from the incident beam direction as they penetrate through thin ([...

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Veröffentlicht in:	Appl. Phys. Lett., v. 24, no. 1, pp. 3-5 v. 24, no. 1, pp. 3-5, 1974-01, Vol.24 (1), p.3-5
Hauptverfasser:	Eisen, F. H., Bo/ttiger, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	ENERGY SPECTRA INTERSTITIALS ION IMPLANTATION KRYPTON IONS N50340 -Metals, Ceramics, & Other Materials-Plastics & Other Materials-Radiation Effects SILICON- PROTON CHANNELING TRANSMISSION
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