Interpretation of channeling effect measurements of disorder in ion-implanted silicon

A new method of applying channeling to determine the number of displaced atoms in an ion-implanted silicon sample is described. The technique utilizes measurements of the transmission energy spectra of channeled protons scattered 10° from the incident beam direction as they penetrate through thin ([inverted lazy s] 1 μm) silicon crystals to discriminate between ``true'' interstitial atoms and atoms only slightly off lattice sites due to strain. A comparison of this technique with the standard channeling effect technique, using backscattering, indicates that the channeling-backscattering technique is sensitive mainly to such ``true'' interstitial atoms.