Anisotropy in the electrical properties of n -type (221) Si/(112̄2) Al2O3
Studies of the resistivity and Hall effect in n-type (221) Si/(112̄2) Al2O3 films have shown that the electron mobility is a strong function of azimuthal direction in the plane of the film. Typical variations in mobility between high- and low-mobility directions are approximately 40%. The anisotropy...
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| Veröffentlicht in: | Applied physics letters 1972-01, Vol.21 (12), p.579-581 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Studies of the resistivity and Hall effect in n-type (221) Si/(112̄2) Al2O3 films have shown that the electron mobility is a strong function of azimuthal direction in the plane of the film. Typical variations in mobility between high- and low-mobility directions are approximately 40%. The anisotropy in mobility is explained on the basis of piezoresistance effects in Si, due to stresses induced by the differential thermal contraction between the Si and the Al2O3 substrate. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1654263 |