Low-Carrier-Concentration Liquid Epitaxial Pb1− x Sn x Te
We have achieved multiple-layer liquid epitaxial growth of Pb1−xSnx Te from Pb–Sn solution. Hall-effect and capacitance measurements determine carrier concentrations to be as low as 3 × 1015 cm−3 at 77 °K. Interference microscopy reveals that deviations from planarity of the grown surface are less t...
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| Veröffentlicht in: | Applied physics letters 1971-09, Vol.19 (6), p.202-203 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We have achieved multiple-layer liquid epitaxial growth of Pb1−xSnx Te from Pb–Sn solution. Hall-effect and capacitance measurements determine carrier concentrations to be as low as 3 × 1015 cm−3 at 77 °K. Interference microscopy reveals that deviations from planarity of the grown surface are less than 1 μm over an area of 1 mm2. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1653883 |