NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES

NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES

We have introduced a new instability criterion for a recombination wave diode, e.g., golddoped silicon p+-i-n+ diode, irrespective of the type of injecting contacts. This criterion gives a class of sufficient conditions to obtain open-circuit oscillations, and substitutes the presently available ins...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1971-01, Vol.18 (12), p.544-546
Hauptverfasser: Antognetti, P., Chiabrera, A., Ridella, S.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have introduced a new instability criterion for a recombination wave diode, e.g., golddoped silicon p+-i-n+ diode, irrespective of the type of injecting contacts. This criterion gives a class of sufficient conditions to obtain open-circuit oscillations, and substitutes the presently available instability condition. The theoretical results show a satisfactory agreement with known experimental data.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1653532