SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE
Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric con...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1970-01, Vol.17 (9), p.358-360 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!